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May 11, 2024
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ECE 5312 - Compound Semiconductor Devices and Processing
Credits: 3
This laboratory-oriented elective course for upper-level undergraduates and graduate students provides in-depth coverage of processing of InP- and GaAs-based devices in addition to silicon integrated circuit processing. Students without fabrication experience fabricate and characterize MOSFETs and semiconductor lasers. Students with some previous fabrication experience (such as ECE 3311 ) fabricate and test an advanced device mutually agreed upon by the student(s) and instructor. Examples of such devices include high electron mobility transistors, heterojunction bipolar transistors, phase shifters, distributed Bragg reflector lasers, grating-assisted directional couplers, and semiconductor lasers from developing materials such as GaInNAs. The governing equations of photolithography, oxidation, diffusion, ion-implantation, metallization, and etching are derived from fundamental concepts. Silicon process modeling uses the CAD tool SUPREM. Optical components modeling uses the SMU-developed software WAVEGUIDE, GAIN, and GRATING. Includes peer review before final submission of a laboratory report describing the projects. Prerequisite: ECE 3311 or equivalent.
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